DocumentCode
1431528
Title
Ultrafast Low-Loss 42–70 GHz Differential SPDT Switch in 0.35 
m SiGe Technology
Author
Thian, Mury ; Fusco, Vincent F.
Author_Institution
ECIT Inst., Queen´´s Univ. Belfast, Belfast, UK
Volume
60
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
655
Lastpage
659
Abstract
This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.
Keywords
Ge-Si alloys; millimetre wave devices; semiconductor switches; SiGe; bipolar technology; bit rate 13 Gbit/s; current-steering technique; frequency 42 GHz to 70 GHz; size 0.35 mum; time 75 ps; ultrafast low-loss differential SPDT switch; ultrafast wideband low-loss single-pole double-throw differential switch; Impedance matching; Insertion loss; Silicon germanium; Switches; Switching circuits; Transistors; Transmission line measurements; 60 GHz; Absorptive; V-band; balanced circuits; current steering; heterojunction bipolar transistor (HBT); insertion loss; integrated circuit (IC); isolation; mm-wave; rise time; silicon germanium (SiGe); single-pole double-throw (SPDT); switches; switching speed; transistor circuits;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.2011.2180395
Filename
6138887
Link To Document