Title :
Waveguide integrated photodiode for analog fiber-optics links
Author :
Jiang, Hao ; Yu, Paul K L
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
We present the design, fabrication, and characterization of a vertically coupled 1.3-μm wavelength waveguide integrated InGaAs photodiode with distributed absorption. This design, by employing an index-matching layer and a thick waveguiding layer, can yield a significant improvement in the optical power saturation, responsivity, and speed in the same device. The 1-dB compression point of the photodiode response at 20 GHz occurs at 10.2-mA continuous-wave photocurrent. Moreover, the same device exhibits a 47-GHz 3-dB bandwidth with a 50-Ω microwave probe, and a 0.4-A/W microwave responsivity at 20 GHz without antireflection coating at the input facet. Its two-tone output referenced third-order intercept point is +20.32 dBm at 1 GHz and +5.25 dBm at 18 GHz
Keywords :
III-V semiconductors; analogue circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical fibres; optical saturation; optical waveguide components; photodiodes; 0.4-A/W microwave responsivity; 1 GHz; 1-dB compression point; 1.3 mum; 1.3-μm; 10.2 mA; 10.2-mA continuous-wave photocurrent; 18 GHz; 20 GHz; 20.32 dBm at 1 GHz; 47 GHz; 47-GHz 3-dB bandwidth; 5.25 dBm at 18 GHz; 50 ohm; 50-Ω microwave probe; InGaAs; analog fiber-optics links; distributed absorption; index-matching layer; integrated InGaAs photodiode; optical power saturation; responsivity; speed; two-tone output; vertically coupled waveguide; waveguide integrated photodiode; Absorption; Indium gallium arsenide; Microwave devices; Optical design; Optical device fabrication; Optical devices; Optical fiber devices; Optical saturation; Optical waveguides; Photodiodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
