DocumentCode :
1431619
Title :
Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs
Author :
Knoch, Joachim ; Appenzeller, Joerg
Author_Institution :
Tech. Univ. Dortmund, Dortmund, Germany
Volume :
31
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
305
Lastpage :
307
Abstract :
The impact of band lineup and source doping concentration on the performance of heterojunction tunnel FETs (H-TFETs) with type-II heterointerface is investigated by simulations. Exemplarily, H-TFETs based on InAs/AlxGa1-xSb heterostructures are studied. Varying the Al content x, the band lineup can be adjusted from staggered to broken. We find that a staggered band lineup and a medium source doping concentration yield the best ON/OFF-state performance in terms of an inverse subthreshold slope that is smaller than 60 mV/dec and fT values in the terahertz range.
Keywords :
III-V semiconductors; aluminium compounds; doping; field effect transistors; gallium compounds; indium compounds; tunnel transistors; InAs-AlxGa1-xSb; band lineup; high-performance p-type III-V heterojunction tunnel FETs; source doping concentration; Heterojunctions; MOS devices; tunnel transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2041180
Filename :
5424051
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1431619
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