Title :
A new compact nonlinear model improvement methodology for GaN-HEMT
Author :
Torres-Rios, Emmanuel ; Saavedra, Christian
Author_Institution :
Dept. of Eng., Univ. Popular Autnoma del Estado de Puebla, Puebla, Mexico
Abstract :
The analysis of the nonlinear charge bias dependence according to the input power, with respect to the intermodulation distortion (IMD) product for a GaN-HEMT, is presented. The results obtained from the analysis of the two-tone measurements, are used to determine the GaN-HEMT model deficiencies. An extrinsic non-linear capacitance element is added to improve the accuracy of the core compact model. The simplicity of the measurement procedure and data analysis, makes this a suitable methodology for a good non-linear characterization for GaN-HEMT. A comparison between simulated and experimental data is presented over a Lm = 08μm GaN-HEMT under different bias and input power conditions to validated the proposed model.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; intermodulation distortion; wide band gap semiconductors; GaN; GaN-HEMT; IMD; extrinsic nonlinear capacitance element; intermodulation distortion; nonlinear charge bias; size 0.8 mum; two-tone measurements; Accuracy; Analytical models; Field effect transistors; Gallium nitride; Integrated circuit modeling; Mathematical model; Voltage measurement; GaN-HEMT characterization; IMD characterization; nonlinear effects; two-tone measurements;
Conference_Titel :
Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
Conference_Location :
Santiago
Print_ISBN :
978-1-4799-2506-3
DOI :
10.1109/LASCAS.2014.6820247