Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film

Author

Ha, Heonjun ; Kim, Ohyun

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

368

Lastpage

370

Abstract

The effect of various electrode materials has been studied for organic nonvolatile memory devices using a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film. The bottom electrodes (BEs) were indium tin oxide (ITO) and Al, while the top electrodes (TEs) were Al, Ti, Cr, ITO, Au, Ni, Pd, and Pt. The ITO/PEDOT:PSS/TE devices only had a bipolar switching behavior, while the Al/PEDOT:PSS/TE devices did not have any switching behavior unless a compliance current (CC) was used in the write-operation method. Then, they had a unipolar switching behavior irregardless of the TE material. Therefore, the BE material and the CC have crucial roles in the switching behavior and characteristics.

Keywords

aluminium; chromium; electrodes; gold; indium compounds; nickel; organic semiconductors; palladium; platinum; random-access storage; switching circuits; thin film devices; titanium; Al; Au; Cr; ITO; Ni; Pd; Pt; Ti; bipolar switching behavior; bottom electrodes; compliance current; electrode-material-dependent switching characteristics; organic nonvolatile memory devices; poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) thin film; top electrodes; write-operation method; Compliance current (CC); nonvolatile memory devices; poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin film; various electrode materials;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2041182

Filename

5424052