Title :
Fast Flexible Plastic Substrate ZnO Circuits
Author :
Zhao, Dalong ; Mourey, Devin A. ; Jackson, Thomas N.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fDate :
4/1/2010 12:00:00 AM
Abstract :
We report thin-film transistors (TFTs) and circuits fabricated on flexible plastic substrates using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200??C. Crossover test structures fabricated on flexible substrates have a good yield, and ZnO TFTs have a field-effect mobility of 20 cm2/V ?? s. The 15-stage ring oscillators are operated at > 2 MHz with a supply voltage of VDD = 18 V, corresponding to a propagation delay of < 20 ns/stage. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date.
Keywords :
II-VI semiconductors; flexible electronics; oscillators; plasma deposition; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; field-effect mobility; flexible plastic substrate circuits; oxide-semiconductor circuits; plasma-enhanced atomic layer deposition; ring oscillators; temperature 200 degC; thin-film transistors; voltage 18 V; Flexible circuits; plasma-enhanced atomic layer deposition (PEALD); thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2041321