Fast Flexible Plastic Substrate ZnO Circuits

Author

Zhao, Dalong ; Mourey, Devin A. ; Jackson, Thomas N.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

31

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

323

Lastpage

325

Abstract

We report thin-film transistors (TFTs) and circuits fabricated on flexible plastic substrates using ZnO thin films deposited by plasma-enhanced atomic layer deposition at 200??C. Crossover test structures fabricated on flexible substrates have a good yield, and ZnO TFTs have a field-effect mobility of 20 cm²/V ?? s. The 15-stage ring oscillators are operated at > 2 MHz with a supply voltage of V_DD = 18 V, corresponding to a propagation delay of < 20 ns/stage. To the best of our knowledge, these are the fastest oxide-semiconductor circuits on flexible substrates reported to date.

Keywords

II-VI semiconductors; flexible electronics; oscillators; plasma deposition; semiconductor thin films; thin film transistors; wide band gap semiconductors; zinc compounds; ZnO; field-effect mobility; flexible plastic substrate circuits; oxide-semiconductor circuits; plasma-enhanced atomic layer deposition; ring oscillators; temperature 200 degC; thin-film transistors; voltage 18 V; Flexible circuits; plasma-enhanced atomic layer deposition (PEALD); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2041321

Filename

5424055