DocumentCode :
1431668
Title :
Integrated Voltage Reference Generator for GaN Smart Power Chip Technology
Author :
Wong, King-Yuen ; Chen, Wanjun ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume :
57
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
952
Lastpage :
955
Abstract :
GaN smart power chip technology has been realized using a GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral devices for mixed-signal functional blocks. In particular, this brief presents the imperative analog functional block-voltage reference generator for smart power applications with wide-temperature-range stability. The circuit is capable of proper functions within a wide temperature range from room temperature up to 250°C , illustrating the unique advantage of the wide-bandgap GaN in high-temperature operation. The voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky diodes, and the devices were operated in the subthreshold regime to obtain low power consumption. The voltage reference generator achieved an average drift of less than 0.5 mV/°C and can be used as a reference voltage in various biasing and sensing circuits.
Keywords :
III-V semiconductors; Schottky diodes; Zener diodes; aluminium compounds; avalanche diodes; high electron mobility transistors; monolithic integrated circuits; power integrated circuits; silicon; wide band gap semiconductors; AlGaN-GaN; HEMT platform; Schottky diodes; imperative analog functional block; integrated voltage reference generator; low-voltage peripheral devices; mixed-signal functional blocks; monolithically integrated high-voltage power devices; power consumption; sensing circuits; smart power chip technology; temperature 293 K to 298 K; wide-bandgap high-temperature operation; wide-temperature-range stability; Aluminum gallium nitride; Circuit stability; Energy consumption; Gallium nitride; HEMTs; Integrated circuit technology; Power generation; Schottky diodes; Temperature distribution; Voltage; AlGaN/GaN HEMT; GaN; planar integration; smart power; voltage reference; wide bandgap;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2041510
Filename :
5424059
Link To Document :
بازگشت