DocumentCode :
1431785
Title :
Gold-Free GaAs Nanowire Synthesis and Optical Properties
Author :
Morral, A. Fontcuberta i
Author_Institution :
Inst. of Mater., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Volume :
17
Issue :
4
fYear :
2011
Firstpage :
819
Lastpage :
828
Abstract :
To date, the use of gold for the synthesis of nanowires has proven to be nearly impossible to circumvent, regardless of the potential negative effects on the nanowires physical properties. In this paper, the synthesis of gallium arsenide nanowires without the use of gold as a catalyst is reviewed. The review focuses on gallium-assisted growth and selective area epitaxy, revealing the common and different growth mechanisms and resulting properties. In particular, we show how the excellent material quality results also in excellent optical properties of gold-free GaAs nanowires and related heterostructures. Finally, the perspectives for future applications are discussed.
Keywords :
III-V semiconductors; catalysts; gallium arsenide; molecular beam epitaxial growth; nanowires; GaAs; catalyst; gallium-assisted growth; gold-free nanowire synthesis; material quality; negative effects; optical properties; selective area epitaxy; Epitaxial growth; Gallium arsenide; Gold; Substrates; Temperature measurement; Catalyst free; gold free; growth mechanisms; molecular beam epitaxy (MBE); nanowires;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2010.2091259
Filename :
5696729
Link To Document :
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