Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Author

Park, Pil Sung ; Rajan, Siddharth

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

Volume

58

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

704

Lastpage

708

Abstract

We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.

Keywords

III-V semiconductors; aluminium compounds; buffer circuits; gallium compounds; high electron mobility transistors; space-charge limited devices; wide band gap semiconductors; 2D potential distribution; AlGaN-GaN; drain-induced barrier lowering suppression; high electron mobility transistor; short-channel effect; space-charge-limited current; AlGaN/GaN high electron mobility transistor (HEMT); Ga-polar; N-polar; drain-induced barrier lowering (DIBL); short-channel effects; simulation; technology computer-aided design (TCAD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2099121

Filename

5696749