Title :
Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors
Author :
Hasnain, Ghulam ; Tai, Kuochou ; Yang, L. ; Wang, Y.H. ; Fischer, R.J. ; Wynn, James D. ; Weir, Bonnie ; Dutta, Niloy K. ; Cho, Alfred Y.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
The performance limitations of gain-guided vertical cavity surface emitting lasers (VCSELs) which use epitaxially grown semiconductor distributed Bragg reflectors (DBRs) are discussed. The light-current ( L-I) characteristics and emission wavelength of such lasers are examined as a function of temperature and time under continuous wave (CW) and pulsed operation. The authors observed a sharp roll-over in the CW L-I characteristics which limits the maximum output power. The threshold current under CW operation is found to be lower than that obtained under pulsed conditions. Several microseconds long delay in lasing turn-on is also observed. It is shown quantitatively that these anomalies are a consequence of severe heating effects. It is shown that reduction of the series resistance and threshold current density can lead to significant improvements in the power performance of VCSELs
Keywords :
distributed Bragg reflector lasers; laser cavity resonators; semiconductor junction lasers; continuous wave; emission wavelength; epitaxially grown semiconductor distributed Bragg reflectors; gain-guided vertical cavity surface emitting lasers; lasing turn-on; light-current characteristics; maximum output power; power performance; pulsed operation; series resistance; severe heating effects; temperature; threshold current density; time; Delay; Distributed Bragg reflectors; Heating; Optical pulses; Power generation; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
