Title :
GaAs buried heterostructure vertical cavity top-surface emitting lasers
Author :
Ibaraki, Akira ; Furusawa, Kotaro ; Ishikawa, Toru ; Yodoshi, Keiichi ; Yamaguchi, Takao ; Niina, Tatsuhiko
Author_Institution :
Sanyo Electric Co., Osaka, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
Room-temperature continuous wave (CW) operation was achieved using GaAs buried heterostructure vertical cavity top-surface emitting lasers with both GaAlAs/AlAs and SiO2/TiO2 distributed Bragg reflectors (DBRs). One-step organometallic vapor phase epitaxy (OMVPE) and two-step liquid phase epitaxy (LPE) growth techniques has been developed. In order to improve the reflectivity of both DBRs, the Bragg wavelength was designed to correspond with a longer mode than the lasing mode under pulsed conditions, and a sufficiently flat planar surface was formed by LPE growth. The threshold current was 17.4 mA, and an output power of up to 0.84 mW was obtained. The lasing wavelength was about 911 nm. A 5×6 common voltage array was used as a trial structure for a two-dimensional array consisting of the buried heterostructure top-surface emitting laser diodes
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; liquid phase epitaxial growth; semiconductor junction lasers; semiconductor laser arrays; vapour phase epitaxial growth; 0.84 mW; 17.4 mA; 911 nm; Bragg wavelength; GaAs buried heterostructure vertical cavity top surface emitting lasers; GaAsAs-AlAs; III-V semiconductor; SiO2-TiO2; buried heterostructure top-surface emitting laser diodes; common voltage array; distributed Bragg reflectors; flat planar surface; growth techniques; lasing mode; lasing wavelength; organometallic vapor phase epitaxy; output power; pulsed conditions; reflectivity; room temperature continuous wave operation; threshold current; two-dimensional array; two-step liquid phase epitaxy; Distributed Bragg reflectors; Epitaxial growth; Gallium arsenide; Optical arrays; Reflectivity; Semiconductor laser arrays; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
