DocumentCode :
1431957
Title :
Low-threshold 1.5 μm compressive-strained multiple- and single-quantum-well lasers
Author :
Zah, Chung-en ; Bhat, Rajaram ; Favire, Frederick J., Jr. ; Menocal, Serafin G. ; Andreadakis, Nicholas C. ; Cheung, Kwok-Wai ; Hwang, Dah-Min David ; Koza, M.A. ; Lee, Tien-Pei
Author_Institution :
Bellcore, Red Bank, NJ, USA
Volume :
27
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
1440
Lastpage :
1450
Abstract :
Design considerations for low-threshold 1.5-μm lasers using compressive-strained quantum wells are discussed. Parameters include transparency current density, maximum modal gain, bandgap wavelength, and carrier confinement. The optical confinement for a thin quantum well in the separate-confinement heterostructure (SCH) and the step graded-index separate-confinement heterostructure (GRINSCH) are analyzed and compared. 1.5-μm compressive-strained multiple- and single-quantum-well lasers have been fabricated and characterized. As a result of the compressive strain, the threshold current density is loss limited instead of transparency limited. By the use of the step graded-index separate-confinement heterostructure to reduce the waveguide loss, a low threshold current density of 319 A/cm2 was measured on compressive-strained single-quantum-well broad-area lasers with a 27 μ oxide stripe width
Keywords :
gradient index optics; laser transitions; semiconductor junction lasers; semiconductor quantum wells; 1.5 micron; bandgap wavelength; carrier confinement; compressive-strained quantum wells; low threshold compressive strained multiple quantum well lasers; maximum modal gain; optical confinement; oxide stripe width; single-quantum-well lasers; step graded-index separate-confinement heterostructure; thin quantum well; threshold current density; transparency current density; Capacitive sensors; Carrier confinement; Current density; Optical design; Optical losses; Optical waveguides; Photonic band gap; Quantum well lasers; Threshold current; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.89961
Filename :
89961
Link To Document :
بازگشت