Title :
A fully symbolic homotopy-based memristor model for applications to circuit simulation
Author :
Sarmiento-Reyes, Arturo ; Hernandez-Martinez, Luis ; Hernandez Mejia, Carlos ; Diaz Arango, Gerardo Ulises ; Vazquez-Leal, Hector
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
Abstract :
Since the outcoming of the memristor, memristive systems and mem-elements in electronics, new features for analog and digital circuit design have been introduced, and as a result models for the memristor are strongly needed in order to incorporate the device to the design flow loop. In this paper, a model for the memristor is introduced, it is generated by solving the differential equation, that governs the physical functioning of the device, by using a homotopy formulation. The generated model is recast in fully symbolic form that can be used to carry out behavioral simulation of circuits containing memristors.
Keywords :
circuit simulation; differential equations; memristors; perturbation techniques; analog circuit design; circuit simulation; design flow loop; differential equation; digital circuit design; fully symbolic homotopy-based memristor model; homotopy formulation; mem-elements; memristive systems; Computational modeling; Differential equations; Equations; Integrated circuit modeling; Mathematical model; Memristors; Numerical models;
Conference_Titel :
Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
Conference_Location :
Santiago
Print_ISBN :
978-1-4799-2506-3
DOI :
10.1109/LASCAS.2014.6820269
