The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides

Author

Nissan-Cohen, Y. ; Gorczyca, T.

Author_Institution

General Electric Co., Schenectady, NY, USA

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

287

Lastpage

289

Abstract

The effect of high-temperature ( approximately=900 degrees C) hydrogen on the gate oxides of MOS devices is studied. Hydrogen is introduced into devices by either high-temperature anneal or conventional process steps such as low-pressure chemical vapor deposition (LPCVD) of Si/sub 3/N/sub 4/. In all cases, measurements of high-field stress behavior show that high-temperature hydrogen steps reduce time to breakdown and increase bulk and interface trap generation, but do not affect the generation of positive charge. These results indicate that the wear-out mechanism of gate oxides at high fields is related to trap generation rather than to accumulation of positive charge.<>

Keywords

insulated gate field effect transistors; semiconductor technology; 900 C; H/sub 2/ inclusion; LPCVD; Si/sub 3/N/sub 4/; SiO/sub 2/; conventional process steps; gate oxides; gate oxides of MOS devices; high temperature hydrogenated wafers; high-field stress behavior; high-temperature anneal; interface trap generation; positive charge trapping; time-dependent dielectric breakdown; trap generation; wear-out mechanism; Annealing; Charge measurement; Current measurement; Design for quality; Dielectric breakdown; Electric breakdown; Electron traps; Hydrogen; Stress measurement; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.719

Filename

719