TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

Author

Okamoto, Minoru ; Sato, Kenji ; Mawatari, Hiroyasu ; Kano, Fumiyoshi ; Magari, Katsuaki ; Kondo, Yasuhiro ; Itaya, Yoshio

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1463

Lastpage

1469

Abstract

A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga_0.27In_0.53As-Ga_x In_1-xAs tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; Ga_0.27In_0.53As-Ga_xIn_1-xAs tensile strained layer superlattice structures; GaInAs-InP lasers; III-V semiconductors; TM mode gain enhancement; active layer; band diagram; gain difference; long wavelength laser diodes; tensile strained barrier structure; tensile strained-layer superlattice; transverse electric modes; transverse magnetic mode gain; well layer thicknesses; Laser modes; Laser sintering; Lattices; Optical devices; Radiative recombination; Semiconductor lasers; Superlattices; Tellurium; Tensile strain; Tensile stress;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89964

Filename

89964