DocumentCode :
14321
Title :
Design Considerations for a Fast Stacked-MOSFET Switch
Author :
Sack, M. ; Keipert, Sebastian ; Hochberg, Michael ; Greule, Mario ; Mueller, G.
Author_Institution :
Inst. for Pulsed Power & Microwave Technol., Karlsruhe Inst. of Technol., Eggenstein-Leopoldshafen, Germany
Volume :
41
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
2630
Lastpage :
2636
Abstract :
For fast pulse generators using pulse-forming lines for energy storage, a fast MOSFET is employed as switch. It needs to have the capability of switching on the current within a short rise time. Fast switching of MOSFET requires the gate driver next to MOSFET in order to minimize the inductance. To increase the voltage switching capability of a MOSFET switch, several MOSFETs are switched in series. For such a configuration, a synchronous switching of MOSFETs is crucial. Hence, the gate drive circuitry needs to be designed to have equal propagation delay for each MOSFET. The circuitry for two stages of a stacked MOSFET switch including power supply and trigger circuit is designed, set up, and tested. The paper describes some design considerations and shows the results of some first tests.
Keywords :
MOSFET; driver circuits; field effect transistor switches; integrated circuit design; power supply circuits; pulse generators; trigger circuits; design considerations; energy storage; fast stacked-MOSFET switch; gate drive circuitry; gate driver; power supply; propagation delay; pulse generators; pulse-forming lines; stacked MOSFET switch; synchronous switching; trigger circuit; voltage switching capability; Delays; Inductance; Logic gates; MOSFET; Switches; Switching circuits; Windings; MOSFET switch; pulse generator;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2013.2267395
Filename :
6548092
Link To Document :
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