Short-wavelength InGaAlP visible laser diodes

Author

Hatakoshi, Gen-ichi ; Itaya, Kazuhiko ; Ishikawa, Masayuki ; Okajima, Masaki ; Uematsu, Yutaka

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1476

Lastpage

1482

Abstract

Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 630 nm; III-V semiconductor; InGaAlP; highly doped p-cladding layer; leakage current; operation temperature; oscillation wavelength; short-wavelength InGaAlP visible-light laser diodes; small conduction-band discontinuity; temperature characteristics; transverse-mode stabilized InGaAlP lasers; Diode lasers; Information processing; Laser stability; Leakage current; Light sources; Optical materials; Photonic band gap; Power generation; Power lasers; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89966

Filename

89966