DocumentCode
1432213
Title
A Model of Lasing Action in a Quasi-Four-Level Thin Active Media
Author
Toroghi, Seyfollah ; Jafari, Ahmad Khayat ; Golpayegani, Ala Hashemi
Author_Institution
Coll. of Opt. & Photonics (CREOL), Univ. of Central Florida, Orlando, FL, USA
Volume
46
Issue
6
fYear
2010
fDate
6/1/2010 12:00:00 AM
Firstpage
871
Lastpage
876
Abstract
A self-consistent numerical model has been developed for simulating lasing properties of a typical thin-disk laser in detail. The temperature-dependent form of the Boltzmann occupation factors, absorption and stimulated-emission cross sections, and thermal conductivity of the Yb:YAG crystal as a quasi-four-level atomic system have been utilized for obtaining various effective operating variables. A Monte Carlo ray-tracing-based code and 2-D finite-element analysis (FEA) with the ANSYS package have been employed to calculate the absorption power and temperature distribution inside the crystal, respectively. Rate equations have also been included in order to obtain other lasing properties. These equations predict that characteristics of the laser are affected by the Boltzmann occupation factors of the pump and the laser states simultaneously. Based on the results, optical pumping efficiency has been examined as a function of output coupler reflectivity, number of the pump beam passes, and temperature.
Keywords
Monte Carlo methods; finite element analysis; solid lasers; thermal conductivity; ytterbium; yttrium compounds; 2D finite-element analysis; ANSYS package; Boltzmann occupation factors; Monte Carlo ray-tracing; YAG:Yb; absorption power; lasing action; quasi-four-level; rate equations; temperature distribution; temperature-dependent form; thermal conductivity; thin active media; Absorption; Atomic beams; Equations; Laser excitation; Laser modes; Monte Carlo methods; Numerical models; Pump lasers; Thermal conductivity; Thermal factors; Modeling; quasi-four-level lasers; rate equations; thin-disk laser;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2010.2040368
Filename
5424137
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