DocumentCode :
1432285
Title :
Sidewall Adhesion and Sliding Contact Behavior of Polycrystalline Silicon Microdevices Operated in High Vacuum
Author :
Alsem, Daan Hein ; Xiang, Hua ; Ritchie, Robert O. ; Komvopoulos, Kyriakos
Author_Institution :
Mater. Sci. Div., Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
Volume :
21
Issue :
2
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
359
Lastpage :
369
Abstract :
The reliability and performance of contact-mode microelectromechanical systems (MEMS) depend strongly on the tribological properties of contact interfaces. Knowledge of the dominant friction and wear mechanisms at submicrometer length scales is therefore of paramount importance to the design of MEMS devices with contact interfaces. The objective of this study was to examine changes in the adhesion behavior and morphology of sliding sidewall surfaces of polycrystalline silicon MEMS devices operated in high vacuum (~105 torr) and under low apparent contact pressures (0.1-18 kPa) and correlate these changes to the operation lifetime. Sidewall adhesion increased with applied contact pressure. Typically, a twofold to fourfold increase in side wall adhesion was measured upon cessation of the device operation (typically, ~106 sliding cycles) due to the increase of the static friction force above the restoring force available by the device. Scanning electron microscopy (SEM) revealed very small amounts of ultrafine wear debris (10-140 nm) on the sidewall surfaces of about half of the tested devices, without discernible changes in the surface topography. Cross-sectional transmission electron microscopy (TEM) showed that sliding did not cause the removal of the silicon oxide film (5-13 nm in average thickness) from the sidewall surfaces. Atomic force microscopy (AFM) indicated that sliding contact was confined at the top of a few elevated ridges on the sidewall surfaces, resulting in nanoscale wear that smoothened locally the surfaces. SEM, TEM, and AFM results of this study show that the tribological properties of contact-mode MEMS devices operating in high vacuum are controlled by only a few nanoscopic contacts, which depend on the local nanotopography of the interacting surfaces.
Keywords :
adhesion; friction; mechanical contact; micromechanical devices; scanning electron microscopy; transmission electron microscopy; wear; SEM; atomic force microscopy; contact interfaces; contact pressure; contact-mode MEMS devices; contact-mode microelectromechanical systems; cross-sectional transmission electron microscopy; friction mechanism; nanoscale wear; nanotopography; polycrystalline silicon MEMS devices; polycrystalline silicon microdevices; scanning electron microscopy; sidewall adhesion; size 10 nm to 140 nm; size 5 nm to 13 nm; sliding contact behavior; sliding sidewall surfaces; surface topography; tribological properties; ultrafine wear debris; wear mechanism; Adhesives; Force; Friction; Scanning electron microscopy; Surface contamination; Surface morphology; Surface topography; Adhesion; contact pressure; friction; micromachine lifetime; nanoscale wear; nanoscopic contacts; oscillatory sliding; polycrystalline silicon; silicon oxide film; sliding cycles; wear debris;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2011.2180364
Filename :
6140532
Link To Document :
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