Title :
Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process
Author :
Wu, Yider ; Lucovsky, Gerald
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Ultrathin nitride-oxide (N/O/spl sim/1.5/2.6 nm) dual layer gate dielectrics have been incorporated into PMOSFETs with boron-implanted polysilicon gates. Boron penetration is effectively suppressed by the top plasma-deposited nitride layer leading to improved short channel performance as compared to PMOSFETs with oxide dielectrics. In addition, improved interface characteristics and hot carrier degradation immunity are also demonstrated for the devices with the N/O dual layer gate dielectrics.
Keywords :
MOSFET; dielectric thin films; hot carriers; oxidation; plasma CVD coatings; PMOSFET; Si:B; boron implanted p/sup +/-polysilicon gate; hot carrier degradation; remote plasma enhanced CVD; thermal oxidation; ultrathin nitride-oxide dual layer gate dielectric; Annealing; Boron; CMOS technology; Dielectric devices; MOSFET circuits; Nitrogen; Oxidation; Plasma devices; Plasma properties; Silicon;
Journal_Title :
Electron Device Letters, IEEE
