Title :
Ultralow-voltage boron-doped diamond field emitter vacuum diode
Author :
Kang, W.P. ; Wisitsora-at, A. ; Davidson, J.L. ; Kerns, D.V.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp2 content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters.
Keywords :
boron; diamond; diodes; electron field emission; vacuum microelectronics; 2 V; C:B; built-in cap; electrostatic bonding; emission current; fabrication; molding; turn-on voltage; ultralow-voltage boron-doped diamond field emitter vacuum diode; vacuum thermal electric treatment; Anodes; Bonding; Boron; Diodes; Doping; Electron emission; Electrostatics; Etching; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
