A real-index guided InGaAlP visible laser diode with a small beam astigmatism

Author

Okajima, Masaki ; Watanabe, Yukio ; Nishikawa, Yukie ; Itaya, Kazuhiko ; Hatakoshi, Gen-ichi ; Uematsu, Yutaka

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1491

Lastpage

1495

Abstract

A real-index guided InGaAlP visible laser diode with a small beam astigmatism has been developed. The structure, fabrication process, and optical properties of the laser are described. The laser is characterized by a slab-coupled waveguide structure with self-aligned current confinement. The laser was fabricated with a two-step metalorganic chemical vapor deposition (MOCVD) process. The laser exhibited stable fundamental transverse mode oscillation with a threshold current as low as 40 mA and a lasing wavelength of 670 nm. As a result of real-index guiding, a small beam astigmatism less than 2 μm has been achieved. The laser exhibited a stable operation for 2000 h under 3 mW at 30°C

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser transitions; semiconductor junction lasers; III-V semiconductor; InGaAlP; MOCVD; fabrication process; lasing wavelength; optical properties; real-index guided InGaAlP visible laser diode; self-aligned current confinement; slab-coupled waveguide structure; small beam astigmatism; stable fundamental transverse mode oscillation; stable operation; structure; threshold current; two-step metalorganic chemical vapor deposition; Chemical lasers; Chemical vapor deposition; Diode lasers; Laser beams; Laser modes; Laser stability; Optical device fabrication; Optical waveguides; Vision defects; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89968

Filename

89968