Title :
A real-index guided InGaAlP visible laser diode with a small beam astigmatism
Author :
Okajima, Masaki ; Watanabe, Yukio ; Nishikawa, Yukie ; Itaya, Kazuhiko ; Hatakoshi, Gen-ichi ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A real-index guided InGaAlP visible laser diode with a small beam astigmatism has been developed. The structure, fabrication process, and optical properties of the laser are described. The laser is characterized by a slab-coupled waveguide structure with self-aligned current confinement. The laser was fabricated with a two-step metalorganic chemical vapor deposition (MOCVD) process. The laser exhibited stable fundamental transverse mode oscillation with a threshold current as low as 40 mA and a lasing wavelength of 670 nm. As a result of real-index guiding, a small beam astigmatism less than 2 μm has been achieved. The laser exhibited a stable operation for 2000 h under 3 mW at 30°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser transitions; semiconductor junction lasers; III-V semiconductor; InGaAlP; MOCVD; fabrication process; lasing wavelength; optical properties; real-index guided InGaAlP visible laser diode; self-aligned current confinement; slab-coupled waveguide structure; small beam astigmatism; stable fundamental transverse mode oscillation; stable operation; structure; threshold current; two-step metalorganic chemical vapor deposition; Chemical lasers; Chemical vapor deposition; Diode lasers; Laser beams; Laser modes; Laser stability; Optical device fabrication; Optical waveguides; Vision defects; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
