Title :
Dependence of the linewidth of a semiconductor laser on the mode distribution
Author :
Krüger, Udo ; Petermann, Klaus
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Berlin, Germany
fDate :
12/1/1990 12:00:00 AM
Abstract :
A theory and measurements that show the dependence of the frequency noise spectrum and, therefore, of the semiconductor laser linewidth on the mode distribution are presented. The theory is based on rate equations where the linewidth is strongly influenced by the gain saturation coefficients (nonlinear gain). Analytical results are restricted to two modes. Measurements show that the linewidth change of the main mode depends on the wavelength side of the side mode (related to the wavelength mode of the main mode) and the effect decreases with increasing mode separation. Furthermore, the theoretical and measured frequency noise spectra of a three-mode laser are depicted, showing a characteristic resonance peak for certain mode distributions. This property of the frequency noise spectrum is also described by the theory
Keywords :
electron device noise; laser modes; optical saturation; semiconductor junction lasers; spectral line breadth; characteristic resonance peak; frequency noise spectrum; gain saturation coefficients; mode distribution; mode separation; nonlinear gain; rate equations; semiconductor laser linewidth; side mode; three-mode laser; Frequency measurement; Laser modes; Laser noise; Laser theory; Noise measurement; Nonlinear equations; Resonance; Semiconductor device noise; Semiconductor lasers; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of