New window-structure InGaAlP visible light laser diodes by self-selective Zn diffusion-induced disordering

Author

Itaya, Kazuhiko ; Ishikawa, Masayuki ; Hatakoshi, Gen-ichi ; Uematsu, Yutaka

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1496

Lastpage

1500

Abstract

The behavior of Zn diffusion in InGaAlP double heterostructures during a second metalorganic chemical vapor deposition (MOCVD) growth was investigated, and it found that the behavior of Zn diffusion strongly depends on the presence of an n-GaAs capping layer. A process for InGaAlP window-structure InGaAlP laser diodes was designed using this unique diffusion behavior and disordering of a natural superlattice. A window structure realizing a high power operation was successfully fabricated. A maximum output power above 80 mW was obtained for continuous wave (CW) operation, and 400 mW for pulsed operation

Keywords

III-V semiconductors; aluminium compounds; diffusion in solids; gallium compounds; indium compounds; semiconductor junction lasers; 400 mW; 80 mW; CW operation; III-V semiconductor; InGaAlP double heterostructures; InGaAlP:Zn; MOCVD; high power operation; metalorganic chemical vapor deposition; n-GaAs capping layer; natural superlattice disordering; output power; pulsed operation; self-selective Zn diffusion-induced disordering; window-structure InGaAlP visible light laser diodes; Atomic layer deposition; Chemical lasers; Diode lasers; Electrons; MOCVD; Optical superlattices; Photonic band gap; Power generation; Power lasers; Zinc;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89969

Filename

89969