• DocumentCode
    1432450
  • Title

    Power-independent degradation of high-power GaAlAs lasers with nonabsorbing mirrors

  • Author

    Naito, Hiroki ; Kume, Masahiro ; Hamada, Ken ; Shimizu, Hirokazu ; Kazumura, Masaru ; Kano, Gota ; Teramoto, Iwao

  • Author_Institution
    Matsushita Electron. Corp., Osaka, Japan
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    1550
  • Lastpage
    1554
  • Abstract
    The reliability of high-power single-mode GaAlAs lasers with nonabsorbing mirrors (NAMs) was investigated in detail. The lasers were tested at various output powers and temperatures. The aging test was performed under constant power in order to examine the output power dependence. In order to carry out the measurement with accuracy, the heat sink temperature was controlled with an error of ±0.1°C, and the operating current was measured every hour or every 10 h. As a result, very smooth aging test curves were obtained. Output powers of the coated lasers in the aging tests were 30, 50, and 100 mW, and the temperatures of the heat sink were 50, 70, and 90°C. conventional lasers without a NAM were tested for comparison. The results indicate that the degradation of the lasers is dependent not on the output power, but on the operating current and temperature. The thermal activation energy and the degradation rate is estimated to be 0.85 eV
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; life testing; mirrors; reliability; semiconductor junction lasers; 100 mW; 30 mW; 50 degC; 50 mW; 70 degC; 90 degC; GaAlAs; III-V semiconductor; accuracy; aging test; degradation rate; heat sink temperature; high-power single-mode GaAlAs lasers; nonabsorbing mirrors; operating current; output powers; power independent degradation; reliability; temperatures; thermal activation energy; Aging; Current measurement; Heat sinks; Mirrors; Performance evaluation; Power generation; Power lasers; Temperature; Testing; Thermal degradation;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.89976
  • Filename
    89976