Title :
High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 μm
Author :
Choi, Hong K. ; Eglash, Stephen J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
Double-heterostructure Ga0.84In0.16As0.14Sb0.86-Al 0.5Ga0.5As0.04Sb0.96 diode lasers emitting at 2.27 μm were grown by molecular beam epitaxy on GaSb substrates. For pulsed operation of broad-stripe lasers 300 μm wide, differential quantum efficiencies as high as 50% and output power as high as 900 mW/facet were obtained for a cavity length of 300 μm. Values of ~100% for the internal quantum efficiency and 43 cm-1 for the internal loss coefficient were determined from the measured dependence of differential quantum efficiency on cavity length. The threshold current density was as low as 1.5 kA/cm2 for a cavity length of 700 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; laser transitions; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 2.27 micron; 2.3 micron; 300 micron; 700 micron; 900 mW; Ga0.84In0.16As0.14Sb0.86 -Al0.5Ga0.5As0.04Sb0.96 diode lasers; GaSb substrates; III-V semiconductor; broad-stripe lasers; cavity length; differential quantum efficiencies; high efficiency high power DH lasers; internal loss coefficient; internal quantum efficiency; molecular beam epitaxy; output power; pulsed operation; threshold current density; Diode lasers; Gas lasers; Length measurement; Loss measurement; Molecular beam epitaxial growth; Optical pulses; Power generation; Power lasers; Substrates; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
