A high-power GaAlAs superluminescent diode with an antireflective window structure

Author

Tateoka, Kazuki ; Naito, Hiroki ; Yuri, Masaaki ; Kume, Masahiro ; Hamada, Ken ; Shimizu, Hirokazu ; Kazumura, Masaru ; Teramoto, Iwao

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

Volume

27

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1568

Lastpage

1573

Abstract

A novel high-power GaAlAs superluminescent diode (SLD) structure that introduces an antireflective (AR) window region into the rear side of the SLD is proposed. The light beam which travels backward is emitted from the edge of the active layer and diverges in the window region. Then the beam is reflected at the AR-coated rear facet only by a small percentage, a fraction of which couples into the active layer. Thus, this window structure gives a reduction of the reflectivity at the interface between the active layer and the window region so that lasing oscillation is successfully suppressed. An SLD operation of output power as high as 50 mW is obtained with a stable fundamental spatial mode. The spectral bandwidth at half maximum is about 15 nm over a wide output power range

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; reflectivity; superradiance; 50 mW; GaAlAs; III-V semiconductor; active layer; antireflective window structure; high-power GaAlAs superluminescent diode; lasing oscillation suppression; output power; rear side; reflectivity reduction; spectral bandwidth; stable fundamental spatial mode; Bandwidth; Coatings; Diode lasers; Light sources; Monitoring; Optical fibers; Optical noise; Power generation; Reflectivity; Superluminescent diodes;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.89979

Filename

89979