• DocumentCode
    1432490
  • Title

    Asymmetric double-quantum-well phase modulator using surface acoustic waves

  • Author

    Choy, Wallace C.H. ; Li, E. Herbert ; Weiss, Bernard L.

  • Author_Institution
    Sch. of Electron. Eng. Inf. Technol. & Math., Surrey Univ., Guildford, UK
  • Volume
    34
  • Issue
    10
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1846
  • Lastpage
    1853
  • Abstract
    An AlGaAs-GaAs asymmetric double-quantum-well (DQW) optical phase modulator using surface acoustic waves is investigated theoretically. The optimization steps of the DQW structure, which so far have not been reported in detail, are discussed here. The optimized phase modulator structure is found to contain a five-period QDW active region. A surface acoustic wave induces a potential field which provides the phase modulation. Analysis of the modulation characteristics show that by using the asymmetric DQW, the large change of the induced potential at the surface and thus large modification of the quantum-well (QW) structure can be utilized. The modification of each QW structure is consistent, although this consistency is not always preserved in typical surface acoustic wave devices. Consequently, the change of refractive index in each of the five DQW´s is almost identical. Besides, the change of effective refractive index is ten times larger here in comparison to a modulator with a five-period single QW as the active region and thus produces a larger phase modulation. In addition, a long wavelength and a low surface acoustic wave power required here simplify the fabrication of surface acoustic wave transducer and the acoustooptic phase modulator
  • Keywords
    III-V semiconductors; acousto-optical modulation; aluminium compounds; gallium arsenide; optimisation; phase modulation; semiconductor devices; semiconductor heterojunctions; semiconductor quantum wells; surface acoustic wave devices; surface acoustic wave transducers; AlGaAs-GaAs; AlGaAs-GaAs asymmetric double-quantum-well; DQW structure; acoustooptic phase modulator; active region; asymmetric double-quantum-well phase modulator; fabrication; five-period QDW active region; induced potential; modulation characteristics; optical phase modulator; optimization steps; optimized phase modulator structure; phase modulation; potential field; refractive index; surface acoustic wave power; surface acoustic wave transducer; surface acoustic waves; Acoustic waves; Optical modulation; Optical refraction; Optical surface waves; Optical variables control; Phase modulation; Quantum well devices; Refractive index; Surface acoustic wave devices; Surface acoustic waves;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.720217
  • Filename
    720217