InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths

Author

Jelen, Christopher ; Slivken, Steven ; Guzman, Vivian ; Razeghi, Manijeh ; Brown, Gail J.

Author_Institution

Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA

Volume

34

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1873

Lastpage

1876

Abstract

We demonstrate the first long-wavelength quantum-well infrared photodetectors using the lattice-matched n-doped InGaAlAs-InP materials system. Samples with AlAs mole fractions of 0.0, 0.1, and 0.15 result in cutoff wavelengths of 8.5, 13.3, and 19.4 μm, respectively, a 45° facet coupled illumination responsivity of R=0.37 μm and detectivity of D_λ*=3×10⁸ cm·√(Hz)· at T=77 K, for a cutoff wavelength λ_c=13.3 μm have been achieved. Based on the measured intersubband photoresponse wavelength, a null conduction band offset is expected for In_0.52Ga_0.21Al_0.27As-InP heterojunctions

Keywords

III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor heterojunctions; semiconductor quantum wells; 45° facet coupled illumination responsivity; 77 K; 8 to 20 mum; In_0.52Ga_0.21Al_0.27As-InP; InGaAlAs-InP; cutoff wavelengths; detectivity; infrared photodetectors; intersubband photoresponse wavelength; lattice-matched n-doped materials system; long-wavelength quantum-well infrared photodetectors; mole fractions; null conduction band offset; quantum-well infrared photodetectors; Electromagnetic wave absorption; Face detection; Gallium; Indium phosphide; Infrared detectors; Ohmic contacts; Photodetectors; Photonic band gap; Quantum well devices; Quantum wells;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.720221

Filename

720221