Title :
A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier
Author :
Chen, Y.C. ; Lai, R. ; Lin, E. ; Wang, H. ; Block, T. ; Yen, H.C. ; Streit, D. ; Jones, W. ; Liu, P.H. ; Dia, R.M. ; Huang, T.-W. ; Huang, P.-P. ; Stamper, K.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We have developed W-band high-power monolithic microwave integrated circuit (MMIC) amplifiers using passivated 0.15 μm gate length InGaAs/InAlAs/InP HEMT´s. A 640 μm single-stage MMIC amplifier demonstrated an output power of 130 mW with 13% power-added efficiency and 4 dB associated gain at 94 GHz. This result represents the best output power to date measured from a single fixtured InP-based HEMT MMIC at this frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; millimetre wave amplifiers; power amplifiers; 0.15 micron; 13 percent; 130 mW; 4 dB; 640 micron; 94 GHz; EHF; HEMT high-power amplifier; InGaAs-InAlAs-InP; InP-based HEMT; W-band; monolithic MM-wave integrated circuit; single-stage MIMIC amplifier; HEMTs; High power amplifiers; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Power generation;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
