Title :
High-speed and low-relative-intensity noise 1.3 μm InGaAsP semi-insulating buried crescent lasers
Author :
Cheng, Wood-Hi ; Buehring, Klaus-Dieter ; Appelbaum, Ami ; Renner, Daniel ; Shin, S. ; Su, C.B. ; Mar, A. ; Bowers, J.E.
Author_Institution :
Rockwell Int., Newbury Park, CA, USA
fDate :
6/1/1991 12:00:00 AM
Abstract :
The dependence of static and dynamic performance on active layer doping concentration in 1.3-μm InGaAsP semiinsulating buried crescent (SIBC) Fabry-Perot lasers were investigated experimentally. The optical loss in the active region is one of the dominant mechanisms in determining the threshold current for doped active layer lasers. These SIBC lasers have a 3 dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for continuous-wave (CW) operation, and a relative intensity noise below -150 dB/Hz for biased current at 120 mA. The doped active lasers show an initial small degradation rate at 65°C operation, which gives an acceptably long operation lifetime
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; laser transitions; optical losses; semiconductor junction lasers; 1.3 micron; 120 mA; 16 GHz; 19 GHz; 65 degC; CW operation; Fabry-Perot lasers; III-V semiconductor; InGaAsP; InGaAsP semi-insulating buried crescent lasers; InGaAsP:Zn; active layer doping concentration; biased current; doped active lasers; dynamic performance; high speed; long operation lifetime; low-relative-intensity noise; modulation bandwidth; optical loss; pulsed operation; small degradation rate; static performance; threshold current; Doping; Fabry-Perot; High speed optical techniques; Intensity modulation; Laser noise; Optical losses; Optical modulation; Optical noise; Pulse modulation; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
