Title :
Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR´s by wafer fusion
Author :
Ohiso, Yoshitaka ; Amano, Chikara ; Itoh, Yoshio ; Takenouchi, Hirokazu ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
10/1/1998 12:00:00 AM
Abstract :
We propose a novel design for a 1.55-μm vertical-cavity surface-emitting laser (VCSEL) structure employing double InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors. The fundamental features of InP/GaAs wafer fusion are examined as a function of load pressure. We demonstrate an exact 1.55-μm emission wavelength in the CW mode with low threshold voltage (2.1 V) and low threshold current density (1.8 kA/cm2)
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; optical fabrication; semiconductor lasers; surface emitting lasers; wafer bonding; 2.1 V; CW mode; DBR; GaAs-AlAs; InGaAsP-InP; InGaAsP/InP-GaAs/AlAs; InP-GaAs; InP/GaAs wafer fusion; VCSEL; distributed Bragg reflectors; double InGaAsP/InP-GaAs/AlAs distributed Bragg reflectors; emission wavelength; load pressure; long-wavelength vertical-cavity lasers; novel design; threshold current density; threshold voltage; vertical-cavity surface-emitting laser; wafer fusion; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Laser fusion; Laser modes; Optical design; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
