DocumentCode :
143256
Title :
A novel tri-state device implemented with a metal gated QCA
Author :
Sheikholeslam, S. Arash ; Grecu, Cristian ; Ivanov, Alexander
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
fYear :
2014
fDate :
25-28 Feb. 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this work, we demonstrate a novel tri-state device based on gated quantum-dot cellular automata. This device can be physically implemented by employing metal contacts and molecular quantum dot cells. Our simulations based on a simplified but realistic model show that the current-voltage transfer function of this device has good state separation, which indicates that this device would be feasible for implementation. We introduced a new, tri-state Hamiltonian, that reduces the amount of simulations when used in large-scale systems with thousands or millions of such devices.
Keywords :
cellular automata; electrical contacts; nanoelectronics; quantum dots; quantum gates; current-voltage transfer function; gated quantum-dot cellular automata; metal contacts; molecular quantum dot cells; novel tri-state device; state separation; tri-state Hamiltonian; Automata; Computational modeling; Energy states; Logic gates; Metals; Quantum dots; Tunneling; Nano electronics; QCA; Quantum Dot; Tri-state device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2014 IEEE 5th Latin American Symposium on
Conference_Location :
Santiago
Print_ISBN :
978-1-4799-2506-3
Type :
conf
DOI :
10.1109/LASCAS.2014.6820303
Filename :
6820303
Link To Document :
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