Title :
Mode analysis of semiconductor lasers using lateral confinement by native-oxide layers
Author :
Heerlein, Jörg ; Gruber, Stefan ; Unger, Peter
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
10/1/1998 12:00:00 AM
Abstract :
We have analyzed the lateral mode behavior of 980 nm InGaAs-AlGaAs lasers, where the waveguiding is carried out by oxidized AlAs layers beside a current aperture. The effective refractive-index step between the active and oxidized region has been calculated. We have found that the effective refractive-index step can be adjusted exactly by the thickness of the AlAs layer and its distance to the graded-index separate-confinement heterostructure region. We have compared this native-oxide-confined laser to a standard ridge-waveguide laser with respect to the lateral index step. Furthermore, we suggest a structure for a lateral separate confinement of carriers and optical waves. Experimental results are presented which are in good agreement with the numerical simulations
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; laser beams; laser modes; numerical analysis; refractive index; semiconductor lasers; waveguide lasers; 980 nm; AlAs; InGaAs-AlGaAs; InGaAs-AlGaAs lasers; active region; current aperture; effective refractive-index step; graded-index separate-confinement heterostructure region; lateral confinement; lateral index step; lateral mode behavior; lateral separate confinement; mode analysis; native-oxide layers; native-oxide-confined laser; numerical simulations; optical waves; oxidized AlAs layers; oxidized region; semiconductor lasers; standard ridge-waveguide laser; thickness; waveguiding; Apertures; Fiber lasers; Laser modes; Optical harmonic generation; Optical pumping; Optical refraction; Optical variables control; Pump lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
