Title :
Linewidth broadening of SCH quantum-well lasers enhanced by carrier fluctuation in optical guiding layers
Author :
Yamada, Minoru ; Haraguchi, Yoshinori
Author_Institution :
Dept. of Electr. & Comput. Eng., Kanazawa Univ., Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
A theoretical analysis of the spectral linewidth in separate-confinement heterostructure (SCH) quantum-well (QW) semiconductor lasers is given by taking into account the dynamics of the injected carriers in the optical guiding and barrier layers. The analytical result indicates that the linewidth tends to be abruptly broadened due to the dynamics of the carriers overflowing into the optical guiding layers, typically in a single-quantum-well structure. In addition, a superior effect on the linewidth reduction is predicted by adoption of a potential controlled (or modulation-doped) structure
Keywords :
semiconductor junction lasers; semiconductor quantum wells; spectral line breadth; barrier layers; carrier fluctuation; injected carriers; linewidth broadening; linewidth reduction; modulation doped structure; optical guiding layers; potential controlled structure; semiconductor lasers; separate confinement heterostructure quantum well lasers; spectral linewidth; theoretical analysis; Fluctuations; Laser theory; Nonlinear optics; Optical refraction; Optical variables control; Quantum well lasers; Refractive index; Semiconductor lasers; Spontaneous emission; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
