Title :
Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode
Author :
Lin-Lin Wang ; Wu Peng ; Yu-Long Jiang ; Bing-Zong Li
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The TiSix/n-Si(100) Schottky power diode is fabricated by Ti silicidation, and the Schottky barrier height (SBH) is found to be ~ 0.69 eV. For the first time, it is demonstrated that an 80 meV SBH reduction can be achieved by a TiN capping layer, which can lower ~15% self power consumption of the diode at a forward current of 20 A. It is revealed that the nitrogen atoms´ diffusion into the TiSix results in the SBH lowering, which is discovered by X-ray diffraction measurement, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy.
Keywords :
Schottky barriers; Schottky diodes; X-ray chemical analysis; X-ray diffraction; X-ray photoelectron spectra; diffusion barriers; low-power electronics; silicon; titanium compounds; SBH reduction; Schottky barrier height; Ti silicidation; TiN; TiN capping layer; TiSix-Si; TiSix-Si power diode; X-ray diffraction; X-ray photoelectron spectroscopy; electron volt energy 80 meV; energy dispersive X-ray spectroscopy; nitrogen atoms diffusion; self power consumption; Atomic layer deposition; Power demand; Schottky diodes; Silicides; Silicon; Tin; Schottky diode; TiN capping layer; TiSix; barrier height lowering;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2419615
