Title :
Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
Author :
Hamp, Michael J. ; Cassidy, Daniel T. ; Robinson, B.J. ; Zhao, Q.C. ; Thompson, D.A. ; Davies, M.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side. The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical testing; quantum well lasers; semiconductor device testing; symmetry; InGaAsP; active region; asymmetric multiple-quantum-well InGaAsP lasers; barrier height; design parameters; even carrier distribution; n-side; p-side carriers; preferentially pumped; uneven carrier distribution; Charge carrier processes; Laser theory; Laser tuning; Mirrors; Optical design; Pump lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Testing;
Journal_Title :
Photonics Technology Letters, IEEE