Title :
Microwave/Millimeter-Wave Garnet Films
Author :
Zhang, Huaiwu ; Yang, Qinghui ; Bai, Feiming
Author_Institution :
State Key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
A buffer liquid phase epitaxy method for lead free flux technology has been used to grow large size garnet single-crystal films. Lu2.1Bi0.9Fe5O12 (Bi:LuIG) films with excellent lattice match with the Gd3Ga5O15 (GGG) substrate and superior magnetic and magnetic-optical properties have been obtained by optimizing liquid phase epitaxy (LPE) technology. The saturation magnetization of the film is about 1562 Gs, the Faraday rotation is 1.6 ~ 2.0 deg/μm and the minimum ferromagnetic resonance (FMR) linewidth is 2ΔH = 5.1 Oe. Secondly, the growth of polycrystalline garnet films by radio-frequency (RF) magnetron sputtering has be introduced, and the effects of buffer layer, sputtering parameters and post annealing on the performance of Y3Fe5O12 (YIG) films have been investigated in details. It will be shown that garnet films with smooth surface and adjustable saturation magnetization can be obtained by using a SiO2 buffer layer.
Keywords :
Faraday effect; annealing; bismuth compounds; buffer layers; epitaxial layers; ferromagnetic materials; ferromagnetic resonance; garnets; liquid phase epitaxial growth; lutetium compounds; magnetisation; sputter deposition; Faraday rotation; Gd3Ga5O15; Gd9Ga5O15 substrate; LPE; Lu2.1Bi0.9Fe5O12; Y3Fe5O12; buffer layer; buffer liquid phase epitaxy method; ferromagnetic resonance; lead free flux; magnetic-optical properties; microwave-millimeter-wave garnet films; polycrystalline garnet films; post annealing; radio-frequency magnetron sputtering; saturation magnetization; Faraday effect; LPE; garnet ferrite film;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2090136
