• DocumentCode
    1432947
  • Title

    Carbon nanotube field effect transistor-based content addressable memory architectures

  • Author

    Nepal, Kundan ; You, Keyou

  • Author_Institution
    Sch. of Eng., Univ. of St Thomas, St. Paul, MN, USA
  • Volume
    7
  • Issue
    1
  • fYear
    2012
  • fDate
    1/1/2012 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    The authors investigate the use of carbon nanotube-based field effect transistors for the design of content addressable memory (CAM). An alternate design of a ternary content addressable memory (3CAM) using three-valued circuit structures is presented and it has been shown that the new design can lead to a 25% savings in area with no loss in search speed.
  • Keywords
    carbon nanotubes; field effect transistors; memory architecture; 3CAM; C; carbon nanotube field effect transistor; ternary content addressable memory; three-valued circuit structures;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2011.0576
  • Filename
    6140912