DocumentCode
1432947
Title
Carbon nanotube field effect transistor-based content addressable memory architectures
Author
Nepal, Kundan ; You, Keyou
Author_Institution
Sch. of Eng., Univ. of St Thomas, St. Paul, MN, USA
Volume
7
Issue
1
fYear
2012
fDate
1/1/2012 12:00:00 AM
Firstpage
20
Lastpage
23
Abstract
The authors investigate the use of carbon nanotube-based field effect transistors for the design of content addressable memory (CAM). An alternate design of a ternary content addressable memory (3CAM) using three-valued circuit structures is presented and it has been shown that the new design can lead to a 25% savings in area with no loss in search speed.
Keywords
carbon nanotubes; field effect transistors; memory architecture; 3CAM; C; carbon nanotube field effect transistor; ternary content addressable memory; three-valued circuit structures;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2011.0576
Filename
6140912
Link To Document