A Novel Integration of Si Schottky Diode for mmWave CMOS, Low-Power SoCs, and More

Author

Trivedi, Vishal P. ; John, Jay P. ; To, Kun-Hin ; Huang, W. Margaret

Author_Institution

Freescale Semicond. Inc., Tempe, AZ, USA

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

258

Lastpage

260

Abstract

A novel manufacturable integration of Si Schottky contact/diode using the standard W-contact process (instead of the standard silicide process) is demonstrated. Up to 4× smaller junction area is enabled. Schottky barrier diode with the novel integration shows the potential to replace the bipolar junction transistor/p-n diodes for low-voltage/low-power system-on-a-chip and memory applications and for electrostatic discharge. It is also viable for complementary metal-oxide-semiconductor millimeter-wave (30-300 GHz) designs per its 1-THz cutoff frequency.

Keywords

CMOS integrated circuits; MIMIC; Schottky diodes; bipolar transistors; low-power electronics; silicon; system-on-chip; Schottky diode; Si; W-contact process; bipolar junction transistor; electrostatic discharge; frequency 30 GHz to 300 GHz; junction area; millimeter wave CMOS integrated circuits; p-n diodes; system-on-chip; Complementary metal–oxide–semiconductor (CMOS); Schottky; millimeter wave (mmWave); system on a chip (SoC); terahertz;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2099202

Filename

5699341