Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Author

Garetto, Davide ; Randriamihaja, Yoann Mamy ; Rideau, Denis ; Zaka, Alban ; Schmid, Alexandre ; Leblebici, Yusuf ; Jaouen, Hervé

Author_Institution

IBM STG, Crolles, France

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

621

Lastpage

630

Abstract

Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of-equilibrium quasi-Fermi levels in proximity of the Si/SiO₂ interface has been studied in detail.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit modelling; silicon; silicon compounds; transient analysis; AC characterization; CMOS oxide; CP characterization; Si-SiO₂; charge-pumping characterization; hysteresis loops; multifrequency charge-pumping analysis; multiphonon-assisted charge trapping model; multiphonon-assisted quantum approach; out-of-equilibrium quasiFermi levels; stressed MOS oxide modeling; transient phenomena; Approximation methods; Electron traps; Logic gates; Silicon; Substrates; Transient analysis; Charge pumping (CP); charge trapping; multiphonon-assisted model; oxide degradation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2181389

Filename

6140953