Title :
Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects
Author :
Garetto, Davide ; Randriamihaja, Yoann Mamy ; Rideau, Denis ; Zaka, Alban ; Schmid, Alexandre ; Leblebici, Yusuf ; Jaouen, Hervé
Author_Institution :
IBM STG, Crolles, France
fDate :
3/1/2012 12:00:00 AM
Abstract :
Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of-equilibrium quasi-Fermi levels in proximity of the Si/SiO2 interface has been studied in detail.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit modelling; silicon; silicon compounds; transient analysis; AC characterization; CMOS oxide; CP characterization; Si-SiO2; charge-pumping characterization; hysteresis loops; multifrequency charge-pumping analysis; multiphonon-assisted charge trapping model; multiphonon-assisted quantum approach; out-of-equilibrium quasiFermi levels; stressed MOS oxide modeling; transient phenomena; Approximation methods; Electron traps; Logic gates; Silicon; Substrates; Transient analysis; Charge pumping (CP); charge trapping; multiphonon-assisted model; oxide degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2181389
