• DocumentCode
    1433241
  • Title

    A unified model for single/multifinger HBTs including self-heating effects

  • Author

    Garlapati, Akhil ; Prasad, Sheila

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • Volume
    49
  • Issue
    1
  • fYear
    2001
  • fDate
    1/1/2001 12:00:00 AM
  • Firstpage
    186
  • Lastpage
    191
  • Abstract
    This paper presents a unified analytical large-signal model that includes self-heating effects. The model is applied to a single-finger AlGaAs/GaAs heterojunction bipolar transistor (HBT) and a multifinger InGaAs/GaAs HBT. The self-heating effect in the HBT is simulated as a feedback from the collector current to the base-emitter voltage. The main advantage of the circuit presented here is that additional analysis of coupling between electrical and thermal circuits is not required, as is the case with the existing models. The small-signal HBT model is implemented based on the S-parameters at multiple frequencies measured at multiple bias points. This model is verified by comparing the measured and simulated S-parameters. The large-signal model is based on the forward Gummel plot and is built over the small-signal model. This model is verified by comparing the simulated and measured dc I-V characteristics
  • Keywords
    III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; AlGaAs-GaAs; InGaAs-GaAs; S-parameters; base-emitter voltage; collector current; dc I-V characteristics; feedback; forward Gummel plot; multifinger HBTs; multiple bias points; multiple frequencies; self-heating effects; single-finger HBTs; small-signal model; unified analytical large-signal model; Analytical models; Circuit simulation; Coupling circuits; Feedback; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Scattering parameters; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.900006
  • Filename
    900006