DocumentCode :
1433242
Title :
A Locally Amplified Strain Sensor Based on a Piezoelectric Polymer and Organic Field-Effect Transistors
Author :
Hsu, Yu-Jen ; Jia, Zhang ; Kymissis, Ioannis
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
910
Lastpage :
917
Abstract :
Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation, which have complicated the development of array-based polyvinylidene difluoride (PVDF) sensors. We have used organic field-effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer, i.e., PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal, which can be detected even in the presence of parasitic capacitance. The device couples the voltage generated by the PVDF film under strain into the gate of organic thin-film transistors using an arrangement that allows the full piezoelectric voltage to couple to the channel while also increasing charge-retention time. A bipolar detector is created using ultraviolet-ozone treatment to shift the threshold voltage and increase the current of the transistor under both compressive and tensile strain. An array of devices that maps the strain field on a PVDF film surface is demonstrated.
Keywords :
Curie temperature; capacitance; operational amplifiers; organic field effect transistors; piezoelectric transducers; strain sensors; PVDF film; PVDF sensor; array-based polyvinylidene difluoride; bipolar detector; charge-retention time; compressive strain; current signal; low Curie temperature; organic field-effect transistor; organic thin-film transistor; parasitic capacitance; passive array; piezoelectric charge signal; piezoelectric polymer; piezoelectric sensor; piezoelectric voltage; sensor surface; strain field; strain sensor; tensile strain; threshold voltage; transimpedance amplifier; ultraviolet-ozone treatment; OFETs; piezoelectric; sensors; strain;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2102631
Filename :
5699354
Link To Document :
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