Title :
Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers
Author :
Egawa, Takashi ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
fDate :
6/1/1991 12:00:00 AM
Abstract :
The heterointerfaces of single quantum wells and the characteristics of single-quantum-well lasers on Si substrates grown with Al0.5Ga0.5As-Al0.55Ga0.45 P intermediate layers entirely by metalorganic chemical-vapor deposition are reported. The effects of thermal cycle annealing on the crystallinity and lasing characteristics of GaAs-Si are also reported. Thermal cycle annealing is found to improve the crystallinity of GaAs-Si, and to contribute to room-temperature continuous-wave operations of lasers on Si substrates. By using the Al0.5Ga 0.5As-Al0.55Ga0 intermediate layers, single quantum wells with a specular surface morphology and a smoother heterointerface can be grown on an Si substrate
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 52 percent; 83 percent; Al0.5Ga0.5As-Al0.55Ga0.45 P; AlGaAs-AlGaP intermediate layers; AlGaAs-GaAs; GaAs-Si; III-V semiconductors; Si substrates; average differential quantum efficiency; average threshold current density; continuous-wave operation; crystallinity; differential gain coefficient; heterointerface; internal quantum efficiency; intrinsic mode loss coefficient; lasing characteristics; metalorganic chemical-vapor deposition; single-quantum-well lasers; specular surface morphology; thermal cycle annealing; Annealing; Chemical lasers; Current density; Gallium arsenide; Laser modes; MOCVD; Morphology; Quantum well lasers; Substrates; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
