Title :
Spontaneous emission and gain in GaAlAs quantum well lasers
Author :
Kesler, Morris P. ; Harder, Christoph
Author_Institution :
IBM Zurich Res. Lab., Ruschlikon, Switzerland
fDate :
6/1/1991 12:00:00 AM
Abstract :
Measurements of spontaneous emission from GaAlAs single quantum well lasers over a wide range of carrier densities are discussed. From these measurements, the optical gain, refractive index, and linewidth enhancement factor are determined, all of which contribute to the overall performance of a semiconductor laser. In addition, a simple model which adequately describes the important features in the spontaneous emission (and therefore the gain) data is presented. With this model, quantitative information about the carrier density-dependent bandgap shrinkage, lifetime broadening, and the shape of the broadening functions is obtained
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; refractive index; semiconductor junction lasers; semiconductor quantum wells; superradiance; GaAsAs single quantum well lasers; III-V semiconductor; carrier density-dependent bandgap shrinkage; lifetime broadening; linewidth enhancement factor; optical gain; overall performance; refractive index; semiconductor laser; shape; spontaneous emission; Charge carrier density; Density measurement; Gain measurement; Laser modes; Optical refraction; Optical variables control; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
