An MOS transistor model for analog circuit design

Author

Cunha, Ana Isabela Araujo ; Schneider, Marcio Cherem ; Galup-Montoro, Carlos

Author_Institution

Univ. Fed. da Bahia, Salvador, Brazil

Volume

33

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1510

Lastpage

1519

Abstract

This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model

Keywords

MOS analogue integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; semiconductor device models; MOS transistor model; analog circuit design; analog integrated circuits; common-source amplifier; cutoff frequency; drain-to-source saturation voltage; dynamic characteristics; inversion level; physically based model; saturation currents; single-piece functions; static characteristics; transconductance-to-current ratio; Analog circuits; Analog integrated circuits; Capacitance; Circuit synthesis; Cutoff frequency; FETs; Integrated circuit modeling; Integrated circuit synthesis; MOSFET circuits; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.720397

Filename

720397