40-Gb/s high-power modulator driver IC for lightwave communication systems

Author

Lao, Zhihao ; Thiede, Andreas ; Nowotny, Ulrich ; Lienhart, Hariolf ; Hurm, Volker ; Schlechtweg, Michael ; Hornung, Jochen ; Bronner, Wolfgang ; Köhler, Klaus ; Hülsmann, Axel ; Raynor, Brian ; Jakobus, Theo

Author_Institution

Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany

Volume

33

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1520

Lastpage

1526

Abstract

A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was manufactured in a 0.2-μm gate length AlGaAs/InGaAs high electron mobility transistor technology with an f_T of 68 GHz. The modulator driver IC features differential configuration and operates up to 40 Gb/s with a clock phase margin of 210° and an output voltage swing of 2.9 V_p-p at each output. The maximum slew rate of the output signal is 200 mV/ps. The power dissipation of the circuit is 1.6 W using a single supply voltage of -5 V

Keywords

HEMT integrated circuits; driver circuits; modulators; optical communication equipment; optical fibre communication; optical links; optical modulation; clock phase margin; data decision function; differential configuration; high electron mobility transistor technology; high-power modulator driver IC; lightwave communication systems; maximum slew rate; optical fiber links; output voltage swing; power dissipation; single supply voltage; Clocks; Driver circuits; HEMTs; Indium gallium arsenide; Integrated circuit manufacture; Integrated circuit technology; MODFETs; Optical fibers; Phase modulation; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.720398

Filename

720398