A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference

Author

Rincon-Mora, Gabriel A. ; Allen, Phillip E.

Author_Institution

Power Manage. Products, Texas Instrum. Inc., Dallas, TX, USA

Volume

33

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

1551

Lastpage

1554

Abstract

A low-voltage, micropower, curvature-corrected bandgap reference is presented that is capable of working down to input voltages of 1.1 V in a relatively inexpensive process, MOSIS 2 μm technology. This is a vanilla N-well complementary metal-oxide-semiconductor process technology with an added P-base layer. Second-order curvature correction for this reference is accomplished by a versatile piecewise-linear current-mode technique. The 0.595 V precision reference achieved a line regulation performance of 408 ppm/V for input voltages between 1.2 and 10 V. The circuit only used 14 μA of quiescent current flow

Keywords

CMOS analogue integrated circuits; piecewise-linear techniques; reference circuits; 0.595 to 10 V; 1.1 V; 14 muA; 2 micron; MOSIS technology; P-base layer; current-mode bandgap reference; low-voltage operation; micropower type; piecewise-linear current-mode technique; second-order curvature correction; vanilla N-well CMOS process technology; CMOS technology; Circuits; Dynamic range; Isolation technology; Low voltage; Photonic band gap; Piecewise linear techniques; Power supplies; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.720402

Filename

720402