• DocumentCode
    1433692
  • Title

    Wide-band transimpedance amplifiers using AlGaAs/InxGa 1-xAs pseudomorphic 2-DEG FET´s

  • Author

    Suzuki, Yasuyuki ; Honjo, Kazuhiko

  • Author_Institution
    Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
  • Volume
    33
  • Issue
    10
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    1559
  • Lastpage
    1562
  • Abstract
    Monolithic wide-band amplifiers have been demonstrated using AlGaAs/InxGa1-xAs/GaAs pseudomorphic two-dimensional electron-gas field-effect transistors. The amplifiers have yielded an 18.0 GHz bandwidth and a 41.8 dBΩ transimpedance gain with a feedback resistance of 100 Ω. In addition, the dependence of In mole fraction for an InxGa1-xAs channel layer on device and amplifier performance has been also investigated. The gm and the fT in a device, along with the bandwidth, the gain, and the noise performance in an amplifier, have improved as the In mole fraction is varied from 0 to 0.25
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; integrated circuit noise; two-dimensional electron gas; wideband amplifiers; 18 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InxGa1-xAs TDEGFET; HEMT; In mole fraction; InxGa1-xAs channel layer; MODFET; field-effect transistors; monolithic wide-band amplifiers; noise performance; pseudomorphic 2DEG FETs; two-dimensional electron-gas FETs; wideband transimpedance amplifiers; Bandwidth; Broadband amplifiers; FETs; Gallium arsenide; Gold; Indium gallium arsenide; Integrated circuit noise; Optical amplifiers; Optical fiber communication; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.720404
  • Filename
    720404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1433692