Title :
Wide-band transimpedance amplifiers using AlGaAs/InxGa 1-xAs pseudomorphic 2-DEG FET´s
Author :
Suzuki, Yasuyuki ; Honjo, Kazuhiko
Author_Institution :
Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
10/1/1998 12:00:00 AM
Abstract :
Monolithic wide-band amplifiers have been demonstrated using AlGaAs/InxGa1-xAs/GaAs pseudomorphic two-dimensional electron-gas field-effect transistors. The amplifiers have yielded an 18.0 GHz bandwidth and a 41.8 dBΩ transimpedance gain with a feedback resistance of 100 Ω. In addition, the dependence of In mole fraction for an InxGa1-xAs channel layer on device and amplifier performance has been also investigated. The gm and the fT in a device, along with the bandwidth, the gain, and the noise performance in an amplifier, have improved as the In mole fraction is varied from 0 to 0.25
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; indium compounds; integrated circuit noise; two-dimensional electron gas; wideband amplifiers; 18 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InxGa1-xAs TDEGFET; HEMT; In mole fraction; InxGa1-xAs channel layer; MODFET; field-effect transistors; monolithic wide-band amplifiers; noise performance; pseudomorphic 2DEG FETs; two-dimensional electron-gas FETs; wideband transimpedance amplifiers; Bandwidth; Broadband amplifiers; FETs; Gallium arsenide; Gold; Indium gallium arsenide; Integrated circuit noise; Optical amplifiers; Optical fiber communication; Transconductance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
