Title :
Small-sized optical gate switch using Ge2Sb2Te5 phase-change material integrated with silicon waveguide
Author :
Ikuma, Yuichiro ; Shoji, Yozo ; Kuwahara, Masashi ; Wang, Xiongfei ; Kintaka, Kenji ; Kawashima, Hitoshi ; Tanaka, Daiki ; Tsuda, Hiroyuki
Author_Institution :
Grad. Sch. of Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
An optical gate switch using Ge2Sb2Te5 phase-change material integrated with a silicon waveguide is reported. The switch is very small (~2 ??m) owing to the large difference in absorption coefficient between the crystalline state and the amorphous state. The prototype switch has been fabricated and successfully switched from the transparent on-state to the opaque off-state by laser pulse irradiation. An extinction ratio of more than 12.5 dB was achieved over a wavelength range of 75 nm.
Keywords :
amorphous state; antimony compounds; germanium compounds; integrated optics; optical logic; optical switches; optical waveguides; phase change materials; silicon; Ge2Sb2Te5; absorption coefficient; amorphous state; crystalline state; extinction ratio; laser pulse irradiation; optical gate switch; phase-change material; silicon waveguide; wavelength 75 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3588
